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Freescale Semiconductor Technical Data
Document Number: MRF7S35015HS Rev. 1, 8/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz. * Typical Pulsed Performance: VDD = 32 Volts, IDQ = 50 mA, Pout = 15 Watts Peak (3 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 sec, Duty Cycle = 20% Power Gain -- 16 dB Drain Efficiency -- 41% * Typical WiMAX Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 1.8 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF Power Gain -- 18 dB Drain Efficiency -- 16% RCE -- - 33 dB (EVM -- 2.2% rms) * Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 15 Watts Peak Power * Capable of Handling 3 dB Overdrive @ 32 Vdc Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF7S35015HSR3
3100 - 3500 MHz, 15 W PEAK, 32 V PULSED LATERAL N - CHANNEL RF POWER MOSFET
CASE 465J - 02, STYLE 1 NI - 400S - 240
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 15 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle Case Temperature 81C, 15 W Pulsed, 500 sec Pulse Width, 10% Duty Cycle Symbol RJC Value (2,3) 0.60 0.73 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF7S35015HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 33.5 Adc) Gate Quiescent Voltage (VDD = 32 Vdc, ID = 50 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 300 mAdc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 32 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 32 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 32 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 0.12 92 46 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.2 1.8 0.1 2 2.5 1.7 2.7 3.3 0.3 Vdc Vdc Vdc IGSS IDSS IDSS -- -- -- -- -- -- 1 2 10 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 50 mA, Pout = 15 W Peak (3 W Avg.), f = 3100 MHz and f = 3500 MHz, Pulsed, 100 sec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time Power Gain Drain Efficiency Input Return Loss Gps D IRL 13 38 -- 16 41 - 12 19 -- -7 dB % dB
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 50 mA, Pout = 15 W Peak (3 W Avg.), f = 3100 MHz and f = 3500 MHz, Pulsed, 100 sec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time Output Pulse Droop (500 sec Pulse Width, 10% Duty Cycle) Load Mismatch Tolerance (VSWR = 10:1 at all Phase Angles) 1. Part internally matched both on input and output. DRPout VSWR - T -- 0.2 -- dB
No Degradation in Output Power
MRF7S35015HSR3 2 RF Device Data Freescale Semiconductor
B3 VBIAS + C9 RF INPUT + C8 C7
B2
C6 Z15
Z1
Z2
Z3
Z4 C10
Z5
Z6
Z7
Z8
Z9
Z10 Z11
Z12 Z13
Z14
B1 + C4 C3 + C2 + C1 VSUPPLY
Z17 Z16 Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26 Z27 C5 Z28 Z29 Z30 Z31
RF OUTPUT
DUT
Z1 Z2* Z3* Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17
0.375 x 0.071 Microstrip 0.126 x 0.524 Microstrip 0.079 x 0.016 Microstrip 0.153 x 0.071 Microstrip 0.076" x 0.520 Microstrip 0.037 x 0.252 Microstrip 0.084 x 0.73 Microstrip 0.123 x 0.440 Microstrip 0.048 x 0.073 Microstrip 0.081 x 0.184 Microstrip 0.030 x 0.262 Microstrip 0.525 x 0.336 Microstrip 0.182 x 0.466 Microstrip 0.077 x 0.466 Microstrip 0.603 x 0.048 Microstrip 0.063 x 0.618 Microstrip 0.534 x 0.040 Microstrip
Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26 Z27 Z28 Z29 Z30 Z31 PCB
0.078 x 0.454 Microstrip 0.055 x 0.244 Microstrip 0.630 x 0.073 Microstrip 0.218 x 0.038 Microstrip 0.060 x 0.552 Microstrip 0.079 x 0.038 Microstrip 0.062 x 0.526 Microstrip 0.032 x 0.070 Microstrip 0.110 x 0.526 Microstrip 0.053 x 0.072 Microstrip 0.028 x 0.070 Microstrip 0.098 x 0.148 Microstrip 0.062 x 0.526 Microstrip 0.529 x 0.070 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
* Line length includes microstrip bends
Figure 1. MRF7S35015HSR3 Test Circuit Schematic
Table 5. MRF7S35015HSR3 Test Circuit Component Designations and Values
Part B1* B2, B3 C1 C2 C3, C9 C4, C5, C10 C6 C7 C8 Long Ferrite Bead Short Ferrite Beads 470 F, 63 V Electrolytic Capacitor 47 F, 50 V Electrolytic Capacitor 22 F, 35 V Tantalum Capacitors 2.7 pF Chip Capacitors 0.8 pF Chip Capacitor 0.1 F Chip Capacitor 22 F, 25 V Tantalum Capacitor Description Part Number 2743021447 2743019447 477KXM063M 476KXM050M T491X226K035AT ATC100B2R7BT500XT ATC100B0R8BT500XT CDR33BX104AKYS T491D226K025AT Manufacturer Fair - Rite Fair - Rite Illinois Cap Illinois Cap Kemet ATC ATC AVX Kemet
* B1 is removed for WiMAX circuit performance.
MRF7S35015HSR3 RF Device Data Freescale Semiconductor 3
C8
C3
B2 B3 C7 C9 C6 C4
B1
C2
C1
C10 CUT OUT AREA
C5
MRF7S35015H Rev. 1
Figure 2. MRF7S35015HSR3 Test Circuit Component Layout
MRF7S35015HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 10 TJ = 200C TJ = 175C TJ = 150C 1
C, CAPACITANCE (pF)
100
Coss Ciss
10
Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc
1 Crss 0.1 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
TC = 25C 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100
Figure 3. Capacitance versus Drain - Source Voltage
17 f = 3500 MHz 16.5 Gps, POWER GAIN (dB) 16 15.5 15 14.5 14 13.5 13 2 VDD = 32 Vdc, IDQ = 50 mA Pulse Width = 100 sec Duty Cycle = 20% 10 Pout, OUTPUT POWER (WATTS) PULSED 30 3100 MHz D 3300 MHz Gps 50 Pout, OUTPUT POWER (dBm) PULSED 3300 MHz 45 40 35 30 25 20 15 10 D, DRAIN EFFICIENCY (%) 3500 MHz 47 46 45 44 43 42 41 40 39 38 21 22
Figure 4. DC Safe Operating Area
3100 MHz
P3dB = 43 dBm (19.8 W) P2dB = 42.7 dBm (19 W)
Ideal
P1dB = 42.2 dBm (16.7 W) Actual
VDD = 32 Vdc, IDQ = 50 mA, f = 3500 MHz Pulse Width = 100 sec, Duty Cycle = 20% 23 24 25 26 27 28 29 30
Pin, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power
20 19 Gps, POWER GAIN (dB) 18 17 16 15 14 13 1 10 Pout, OUTPUT POWER (WATTS) PULSED 30 VDD = 32 Vdc, f = 3500 MHz Pulse Width = 100 sec, Duty Cycle = 20% IDQ = 300 mA Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 10 1
Figure 6. Pulsed Output Power versus Input Power
150 mA 100 mA 50 mA
32 V 30 V 28 V 26 V VDD = 24 V 10 Pout, OUTPUT POWER (WATTS) PULSED 30
IDQ = 50 mA, f = 3500 MHz Pulse Width = 100 sec Duty Cycle = 20%
Figure 7. Pulsed Power Gain versus Output Power
Figure 8. Pulsed Power Gain versus Output Power
MRF7S35015HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
30 Pout, OUTPUT POWER (WATTS) PULSED 3300 MHz 25_C 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1 Pin, INPUT POWER (WATTS) PULSED 3500 MHz 85_C 3100 MHz 85_C 3500 MHz 25_C VDD = 32 Vdc, IDQ = 50 mA Pulse Width = 100 sec, Duty Cycle = 20% 3100 MHz 25_C 3500 MHz -30_C 3300 MHz 85_C Gps, POWER GAIN (dB) 16 Gps 15 TC = -30_C 14 25_C 13 12 11 1 10 Pout, OUTPUT POWER (WATTS) PULSED 30 85_C D 85_C 20 10 0 30 40 3100 MHz -30_C 3300 MHz -30_C 17 -30_C 50 D, DRAIN EFFICIENCY (%) 60
VDD = 32 Vdc, IDQ = 50 mA, f = 3100 MHz Pulse Width = 100 sec, Duty Cycle = 20%
Figure 9. Pulsed Output Power versus Input Power
18 Gps 17 Gps, POWER GAIN (dB) TC = -30_C 16 15 14 13 12 1 25_C
Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power -- 3100 MHz
60 50 40 85_C 30 D VDD = 32 Vdc, IDQ = 50 mA, f = 3300 MHz Pulse Width = 100 sec, Duty Cycle = 20% 10 30 20 10 0 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%)
-30_C
85_C
Pout, OUTPUT POWER (WATTS) PULSED
Figure 11. Pulsed Power Gain and Drain Efficiency versus Output Power -- 3300 MHz
19 18 Gps, POWER GAIN (dB) 17 16 15 14 85_C 13 12 11 1 VDD = 32 Vdc, IDQ = 50 mA, f = 3500 MHz Pulse Width = 100 sec, Duty Cycle = 20% 10 Pout, OUTPUT POWER (WATTS) PULSED 30 D TC = -30_C 85_C 25_C 35 30 25 20 15 10 50 -30_C 45 40
Gps
Figure 12. Pulsed Power Gain and Drain Efficiency versus Output Power -- 3500 MHz
MRF7S35015HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
17.25 17 Gps, POWER GAIN (dB) 16.75 Gps 16.5 16.25 16 15.75 15.5 15.25 3100 VDD = 32 Vdc, IDQ = 50 mA, Pout = 15 W Pulse Width = 100 sec, Duty Cycle = 20% 3150 3200 3250 3300 3350 3400 3450 -9 -18 -27 -36 3500 IRL, INPUT RETURN LOSS (dB) D, DRAIN EFFICIENCY (%) 18.3 18.2 18.1 18 17.9 17.8 GAIN (dB) IRL D 44 43 42 41 D, DRAIN EFFICIENCY (%)
f, FREQUENCY (MHz)
Figure 13. Pulsed Power Gain, Drain Efficiency and IRL versus Frequency
RCE (RELATIVE CONSTELLATION ERROR (dB) -25 VDD = 32 Vdc, IDQ = 150 mA, f = 3500 MHz, Single-Carrier -27 OFDM 802.16d, 64 QAM 3/ , 4 Bursts, 10 MHz 4 -29 Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF -31 -33 -35 -37 -39 -41 -43 -45 28 29 30 31 32 33 34 35 36 Pout, OUTPUT POWER (dBm) D RCE Gps 24 22 20 18 16 14 12 10 8 6 4
Figure 14. Single - Channel OFDM Relative Constellation Error, Drain Efficiency and Gain versus Output Power
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 32 Vdc, Pout = 15 W Peak, Pulse Width = 100 sec, Duty Cycle = 20%, and D = 41%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 15. MTTF versus Junction Temperature MRF7S35015HSR3 RF Device Data Freescale Semiconductor 7
f = 3100 MHz Zsource
f = 3100 MHz f = 3500 MHz Zo = 50 Zload
f = 3500 MHz
VDD = 32 Vdc, IDQ = 50 mA, Pout = 15 W Peak f MHz 3100 3300 3500 Zsource W 48.6 + j16.1 11.8 + j3.15 6.43 - j6.79 Zload W 5.6 - j5.2 6.36 - j6.83 7.41 - j15.5
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S35015HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF7S35015HSR3 RF Device Data Freescale Semiconductor 9
MRF7S35015HSR3 10 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date June 2008 Aug. 2008 * Initial Release of Data Sheet * Added p. 1 of Case 465J - 02 Mechanical Outline drawing, p. 9 Description
MRF7S35015HSR3 RF Device Data Freescale Semiconductor 11
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MRF7S35015HSR3
Rev. 12 1, 8/2008 Document Number: MRF7S35015HS
RF Device Data Freescale Semiconductor

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